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PDF KF4N20LW Data sheet ( Hoja de datos )
| Número de pieza | KF4N20LW | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 200V, ID= 1A
Drain-Source ON Resistance : RDS(ON)=1.05
Qg(typ.) =2.9nC
Vth(Max.)= 2V
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
200
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TA=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
1*
0.6*
4*
52
0.2
5.5
2.2*
0.018
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-
Ambient
RthJA
57*
* : Surface Mounted on FR4 Board (40mm 40mm, 1.0t)
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
PIN CONNECTION
KF4N20LW
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
2010. 8. 18
Revision No : 0
1/6
1 page  
KF4N20LW
Fig12. Gate Charge
0.8 VDSS
1.0 mA
VGS
VGS
5V
RL
ID
VDS
Qgs Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VGS 10%
td(off)
VDS td(on) tr
tf
ton toff
Q
VDS(t)
Time
2010. 8. 18
Revision No : 0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KF4N20LW.PDF ] | |
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| KF4N20LW | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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