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KEC - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Numéro de référence KF4N80F
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricant KEC 
Logo KEC 





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KF4N80F fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=800V, ID=4A
Drain-Source ON Resistance :
RDS(ON)(Max)=2.6 @VGS=10V
Qg(typ.)= 17nC
KF4N80F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
LM
D
NN
123
C
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
800
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
4*
2.5*
11*
250
4.7
4.5
43
0.34
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
RthJC
RthJA
2.9
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
TO-220IS (1)
PIN CONNECTION
D
G
S
2012. 9. 5
Revision No : 0
1/6

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