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PDF CS18LV40963 Data sheet ( Hoja de datos )
| Número de pieza | CS18LV40963 | |
| Descripción | High Speed Super Low Power SRAM | |
| Fabricantes | CHIPLUS | |
| Logotipo |  |
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High Speed Super Low Power SRAM
512K Word By 8 Bit
CS18LV40963
Revision History
Rev. No.
2.0
2.1
History
Initial issue with new naming rule
Add a new 32L WSON –8x8mm package
Issue Date
Jan.26, 2005
Aug.12, 2005
1 Rev. 2.1
Chiplus reserves the right to change product or specification without notice.
1 page  
High Speed Super Low Power SRAM
512K Word By 8 Bit
CS18LV40963
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
VTERM
TBIAS
Terminal Voltage with Respect to GND
Temperature Under Bias
TSTG
PT
IOUT
Storage Temperature
Power Dissipation
DC Output Current
Rating
-0.5 to Vcc+0.5
-40 to +125
-60 to +150
1.0
30
Unit
V
OC
OC
W
mA
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0~70oC
-40~85oC
1. Overshoot : Vcc +2.0V in case of pulse width ≦20ns.
2. Undershoot : - 2.0V in case of pulse width ≦20ns.
3. Overshoot and undershoot are sampled, not 100% tested.
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
CAPACITANCE (1) (TA = 25oC, f =1.0 MHz)
Symbol
Parameter
Conditions
CIN
CDQ
Input Capacitance
Input/Output Capacitance
VIN=0V
VI/O=0V
1. This parameter is guaranteed and not tested.
MAX.
6
8
Unit
pF
pF
5 Rev. 2.1
Chiplus reserves the right to change product or specification without notice.
5 Page 
High Speed Super Low Power SRAM
512K Word By 8 Bit
CS18LV40963
NOTES:
1. A write occurs during the overlap(tWP) of low /CE and low /WE. A write begins at the
latest transition among /CE goes low. A write ends at the earliest transition when /CE
goes high and /WE goes high. The tWP is measured from the beginning of the write to
the end of write.
2. tCW is measured from the /CE going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. TWR applied in case a
write ends as /CE or /WE going high.
ORDER INFORMATION
Note: Package material code “R” meets ROHS
11 Rev. 2.1
Chiplus reserves the right to change product or specification without notice.
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet CS18LV40963.PDF ] | |
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