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PDF PHPT610035NK Data sheet ( Hoja de datos )
| Número de pieza | PHPT610035NK | |
| Descripción | NPN/NPN high power double bipolar transistor | |
| Fabricantes | NXP Semiconductors | |
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PHPT610035NK
NPN/NPN high power double bipolar transistor
14 October 2014
Product data sheet
1. General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.
PNP/PNP complement: PHPT610035PK.
NPN/PNP complement: PHPT610035NPK.
2. Features and benefits
• Current gain matching 5%
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Current mirror
• Motor control
• Power management
• Backlighting applications
• Relay replacement
• differential amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 100 V
- - 3A
- 75 110 mΩ
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
1
0
PHPT610035NK
NPN/NPN high power double bipolar transistor
aaa-014342
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
102
duty cycle = 1
Zth(j-a)
(K/W)
10
0.75
0.33
0.2
0.5
0.25
0.1
aaa-014343
0.05
0.02
1 0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm2
10-1
1
10 102 103
tp (s)
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
PHPT610035NK
NPN/NPN high power double bipolar transistor
12. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
SOT1205
E AA
b1 c1
L1
D
H
mounting
base
D1
D2
L
12
e
34
b
(8x)
wA
cX
E1
E2
A1 C
detail X
Lp
θ
yC
0 2.5 5 mm
Dimensions
scale
Unit
A A1 b b1
c
c1
D(1)
D1(1)
D2
(ref)
E(1) E1(1)
E2
e
H
max 1.05 0.1 0.50 4.4 0.25 0.30 4.70 4.8
mm nom
min 0.0 0.35 4.1 0.19 0.24 4.45
5.30 1.8 0.85
6.2
3.5 1.27
4.95 1.6
5.9
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
SOT1205
L L1 Lp w y
1.3 0.55 0.85
0.25 0.1
0.8 0.30 0.40
θ
8°
0°
European
projection
sot1205_po
Issue date
13-02-21
14-08-21
Fig. 14. Package outline LFPAK56D (SOT1205)
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PHPT610035NK.PDF ] | |
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