|
|
Numéro de référence | PTZ30B | ||
Description | Zener diode | ||
Fabricant | Excel Semiconductor | ||
Logo | |||
1 Page
PTZ Series
Zener diode
Features
1. 1.0W power dissipation
2. For surface mounted applications
3. Zener voltage 3.6V to 36V
Applications
Voltage regulation
Absolute Maximum Ratings
Tj=25℃
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
Tamb≤50℃
Pd 1 W
Z-current
IZM Pd/VZ mA
Junction temperature
Tj 150 ℃
Storage temperature range
Tstg -55~+150
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃
Parameter
Forward voltage
Test Conditions
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1.2 V
www.excel-semi.com
FaxBack +86-512-66607370
Excel Semiconductor
Rev. 3e, 1-Nov-2006
1/3
|
|||
Pages | Pages 3 | ||
Télécharger | [ PTZ30B ] |
No | Description détaillée | Fabricant |
PTZ30B | (PTZ3.6B - PTZ36B) SURFACE MOUNT SILICON ZENER DIODES | EIC |
PTZ30B | Zener diode | ROHM Semiconductor |
PTZ30B | Zener diode | Excel Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |