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PDF R1LV0416CSB-7LI Data sheet ( Hoja de datos )
| Número de pieza | R1LV0416CSB-7LI | |
| Descripción | 4M SRAM | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de R1LV0416CSB-7LI (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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R1LV0416C-I Series
Wide Temperature Range Version
4 M SRAM (256-kword × 16-bit)
REJ03C0105-0100Z
Rev. 1.00
Aug.05.2003
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 1.25 µW (typ) (VCC = 2.5 V)
: 1.5 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: −40 to +85°C
Rev.1.00, Aug.05.2003, page 1 of 18
1 page  
R1LV0416C-I Series
Operation Table
CS1# CS2 WE# OE# UB# LB# I/O0 to I/O7
H × × × × × High-Z
× L × × × × High-Z
× × × × H H High-Z
L H H L L L Dout
L H H L H L Dout
L H H L L H High-Z
L H L × L L Din
L H L × H L Din
L H L × L H High-Z
L H H H × × High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +7.0 V.
Value
−0.5 to +4.6
−0.5*1 to VCC + 0.3*2
0.7
−40 to +85
−65 to +150
−40 to +85
Unit
V
V
W
°C
°C
°C
DC Operating Conditions
(Ta = −40 to +85°C)
Parameter
Symbol Min
Supply voltage
VCC 2.2
VSS 0
Input high voltage VCC = 2.2 V to 2.7 V VIH
2.0
VCC = 2.7 V to 3.6 V VIH
2.2
Input low voltage VCC = 2.2 V to 2.7 V VIL
−0.2
VCC = 2.7 V to 3.6 V VIL
−0.3
Note: 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns.
Typ
2.5/3.0
0
Max Unit
3.6 V
0V
VCC + 0.3
VCC + 0.3
0.4
V
V
V
0.6 V
Note
1
1
Rev.1.00, Aug.05.2003, page 5 of 18
5 Page 
R1LV0416C-I Series
Timing Waveform
Read Timing Waveform (WE# = VIH)
Address
CS1#
t RC
Valid address
tAA
tACS1
tCLZ1*2, 3
CS2
tACS2
tCLZ2*2, 3
LB#, UB#
OE#
Dout
tBA
tBLZ*2, 3
tOE
High impedance
tOLZ*2, 3
tCHZ1*1, 2, 3
tCHZ2*1, 2, 3
tBHZ*1, 2, 3
tOHZ*1, 2, 3
tOH
Valid data
Rev.1.00, Aug.05.2003, page 11 of 18
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet R1LV0416CSB-7LI.PDF ] | |
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