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R1LV1616RBG-8SI fiches techniques PDF

Renesas Technology - 16Mb superSRAM

Numéro de référence R1LV1616RBG-8SI
Description 16Mb superSRAM
Fabricant Renesas Technology 
Logo Renesas Technology 





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R1LV1616RBG-8SI fiche technique
Preliminary
R1LV1616R Series
16Mb superSRAM (1M wordx16bit)
This product is under development and its specification
might be changed without any notice.
REJ03C0101-0002Z
Rev.0.02
2003.10.24
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:4µA (3.0V, typ.)
• Smaller stand-by current by "Data retention mode"(“CS2"='L') : 1µA (3.0V, typ.)
Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
Rev.0.02 2003.10.24 page 1 of 16

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