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PDF IL212AT Data sheet ( Hoja de datos )
| Número de pieza | IL212AT | |
| Descripción | (IL211AT / IL212AT / IL213AT) Optocoupler | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IL212AT (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
i179025
A1
K2
NC 3
NC 4
i179002-1
8 NC
7B
6C
5E
DVE
DESCRIPTION
The IL211AT, IL212AT, IL213AT are optically coupled pairs
with a gallium arsenide infrared LED and silicon NPN
phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a high
degree of electrical isolation between input and output.
The IL211AT, IL212AT, IL213AT comes in a standard
SOIC-8 small outline package for surface mounting which
makes it ideally suited for high density applications with
limited space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A choice of 20 %, 50 %, and 100 % minimum CTR at
IF = 10 mA makes these optocouplers suitable for a variety
of different applications.
FEATURES
• Isolation test voltage, 4000 VRMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884) (1)
• DIN EN 60747-5-5 (pending) (1)
Note
(1) Available upon request, as option 1
ORDERING INFORMATION
I L21#AT
SIOC-8
AGENCY CERTIFIED/PACKAGE
UL, cUL
SIOC-8
PART NUMBER
> 20
IL211AT
CTR (%)
10 mA
> 50
IL212AT
6.1 mm
> 100
IL213AT
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
INPUT
Peak reverse voltage
VR
Forward continuous current
IF
Power dissipation
Pdiss
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
BVCEO
Emitter collector breakdown voltage
BVECO
Collector base breakdown voltage
VCBO
ICMAX DC
ICMAX DC
ICMAX
t < 1 ms
ICMAX
Power dissipation
Pdiss
Derate linearly from 25 °C
VALUE
6
60
90
1.2
30
7
70
50
100
150
2
UNIT
V
mA
mW
mW/°C
V
V
V
mA
mA
mW
mW/°C
Document Number: 83615
Rev. 1.9, 21-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
1
1 page  
IL211AT, IL212AT, IL213AT
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection in SOIC-8 Package
0
VCE = 5 V
- 20
- 40
- 60
- 80
- 100
- 120
- 140
- 160
1
22470
10 100
f (kHz)
1000
Fig. 11 - FCTR vs. Phase Angle
1000
100
VCC = 5 V
10
1
0.1
22471
1 10
IC - Collector Current (mA)
Fig. 12 - FCTR vs. IC
100
1000
100
VCE = 5 V, IF = 10 mA
Pulse width = 100 ms
f = 1 kHz
toff
10
ton
1
0.1
0.1
1
10 100
22491
RL - Load Resistance (kΩ)
Fig. 13 - Switching Time vs. Load Resistance
100
VCE = 5 V, IF = 10 mA
Pulse width = 100 μs
f = 1 kHz, RL = 2.2 kΩ
10
toff
ton
110
100
1000
10 000
22492 RBE - Base Emitter Resistance (kΩ)
Fig. 14 - Switching Time vs. Base Emitter Resistance
Document Number: 83615
Rev. 1.9, 21-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IL212AT.PDF ] | |
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