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Numéro de référence | FIGB25N120TDG | ||
Description | IGBT | ||
Fabricant | American First Semiconductor | ||
Logo | |||
IGBT
General Description
Using First proprietary Trench design and advanced NPT
technologv, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
sweasy parallel operation.
Features
ƽ NPT Trench Technology, Positive temperature coefficient
ƽ Low saturation voltage: VCE(sat), typ = 2.0V
@ I C = 25A and TC = 25 C
ƽ Extremely enhanced avalanche capability
Application
ƽ Power switch circuit of induction cooker(IH).
FIGB25N120TDG
PIN Connection
TO-3P/TO-247AD
G CE
VCES
IC
Ptot TC=25℃
VCE(SAT)
1200 V
25 A
320 W
2.0 V
Marking Diagram
YAWW
FIGB
25N120TD
Y = Year
A = Assembly Location
WW = Work Week
FIGB25N120TD = Specific Device Code
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol
VCES
VGES
IC
ICMa1
IF
IFM
PD
TJ,Tstg
TL
Parameter
Collector-Emitter Voltage
Gate- Emitter Voltage
Collector Current
Collector Current @TC = 100 °C
Pulsed Collector Current
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
Power Dissipation @TC = 100 °C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
1200
±20
50
25
75
25
150
320
130
-55 to +150
300
@ 2010 Copyright By American First Semiconductor
Units
V
V
A
A
A
A
A
W
W
℃
℃
Page 1/4
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Pages | Pages 4 | ||
Télécharger | [ FIGB25N120TDG ] |
No | Description détaillée | Fabricant |
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