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FIGB25N120TDG fiches techniques PDF

American First Semiconductor - IGBT

Numéro de référence FIGB25N120TDG
Description IGBT
Fabricant American First Semiconductor 
Logo American First Semiconductor 





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FIGB25N120TDG fiche technique
IGBT
General Description
Using First proprietary Trench design and advanced NPT
technologv, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
sweasy parallel operation.
Features
ƽ NPT Trench Technology, Positive temperature coefficient
ƽ Low saturation voltage: VCE(sat), typ = 2.0V
@ I C = 25A and TC = 25 C
ƽ Extremely enhanced avalanche capability
Application
ƽ Power switch circuit of induction cooker(IH).
FIGB25N120TDG
PIN Connection
TO-3P/TO-247AD
G CE
VCES
IC
Ptot TC=25
VCE(SAT)
1200 V
25 A
320 W
2.0 V
Marking Diagram
YAWW
FIGB
25N120TD
Y = Year
A = Assembly Location
WW = Work Week
FIGB25N120TD = Specific Device Code
Absolute Maximum Ratings (TA=25unless otherwise specified)
Symbol
VCES
VGES
IC
ICMa1
IF
IFM
PD
TJTstg
TL
Parameter
Collector-Emitter Voltage
Gate- Emitter Voltage
Collector Current
Collector Current @TC = 100 °C
Pulsed Collector Current
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current
Power Dissipation @ TC = 25°C
Power Dissipation @TC = 100 °C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
1200
±20
50
25
75
25
150
320
130
-55 to +150
300
@ 2010 Copyright By American First Semiconductor
Units
V
V
A
A
A
A
A
W
W
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