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MURA280G Datasheet دیتاشیت PDF دانلود

دیتاشیت - American First Semiconductor - (MURA205G - MURA2100G) 2.0A Surface Mount High Effciency Rectifiers

شماره قطعه MURA280G
شرح مفصل (MURA205G - MURA2100G) 2.0A Surface Mount High Effciency Rectifiers
تولید کننده American First Semiconductor 
آرم American First Semiconductor 


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MURA280G شرح
Chip Silicon Rectifier
MURA205G THRU MURA2100G
2.0A Surface Mount High
Effciency Rectifiers - 50V-1000V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. MURA205G-H.
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, JEDEC DO-214AC / SMA
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight :Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 2.0 A
IFSM 50 A
5.0
IR
μA
150
RθJA
CJ
20 OC/W
25 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
MURA205G
MURA210G
MURA220G
MURA240G
MURA260G
50
100
200
400
600
35 50
70 100
140 200
280 400
420 600
1.00
1.30
50
MURA280G
MURA2100G
800
1000
560
700
800
1000
1.70
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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