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Numéro de référence | BLD139D | ||
Description | BLD SERIES TRANSISTORS | ||
Fabricant | Shenzhen SI Semiconductors | ||
Logo | |||
Shenzhen SI Semiconductors Co., LTD.
BLD SERIES TRANSISTORS
Product Specification
BLD139D
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
VALUE
700
400
9
12
100
150
-65-150
TO-220
UNIT
V
V
V
A
W
°C
°C
TO-220
Electronic Characteristics Tc=25°C
CHARACTERISTICS
SYMBOL
Collector-Base Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
Collector-Emitter Saturation Voltage
Vces
Base-Emitter Saturation Voltage
DC Current Gain
Storage Time
Falling Time
Vbes
hFE
ts
tf
TEST CONDITION
VCB=700V
VCE=400V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=5.0A,IB=1.0A
IC=8.0A,IB=1.6A
IC=12.0A,IB=3.0A
IC=5.0A,IB=1.0A
VCE=5V,IC=10mA
VCE=5V,IC=5.0A
VCC=5V,IC=0.5A
(UI9600 test)
Integrated diode characteristics
CHARACTERISTICS
SYMBOL
Diode Forward Voltage
Vf
TEST CONDITION
IC=3.0A
MIN
400
9
10
15
MIN
MAX
100
250
1.0
1.5
3.0
1.5
UNIT
A
A
V
V
V
V
80
10
us
0.8
MAX
2.5
UNIT
V
Si semiconductors 2004.10
1
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Pages | Pages 3 | ||
Télécharger | [ BLD139D ] |
No | Description détaillée | Fabricant |
BLD139D | BLD SERIES TRANSISTORS | Shenzhen SI Semiconductors |
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