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SIM100D12SV1 fiches techniques PDF

SemiWell Semiconductor - HALF-BRIDGE IGBT

Numéro de référence SIM100D12SV1
Description HALF-BRIDGE IGBT
Fabricant SemiWell Semiconductor 
Logo SemiWell Semiconductor 





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SIM100D12SV1 fiche technique
Preliminary
“HALF-BRIDGE” IGBT
Features
Applications
rench gate + field stopper, using
Infineon chip design
AC & DC Motor controls
10µs Short circuit capability
VVVF inverters
Low turn-off losses
Optimized for high frequency inverter
Short tail current for over 18KHz
Type Welding machines
Positive VCE(on)
High frequency SMPS
temperature coefficient
UPS, Robotics
SIM100D12SV1
VCES = 1200V
Ic = 100A
VCE(ON) typ. = 1.7V
@ Ic = 100A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Package : V1
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 25
TC = 80
TC=
AC 1 minute
Ratings
1200
± 20
100(140)
200
100(140)
200
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm

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