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PDF SIM75D12SV1 Data sheet ( Hoja de datos )
| Número de pieza | SIM75D12SV1 | |
| Descripción | HALF-BRIDGE IGBT | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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Preliminary
SIM75D12SV1
“HALF-BRIDGE” IGBT MODULE
Features
▪ Smarted NPT Technology Design
▪ 10µs Short circuit capability
▪ Low turn-off losses
▪ Short tail current for over 18KHZ
▪ Positive VCE(on)
temperature coefficient
Applications
▪ AC & DC Motor controls
▪ VVVF inverters
▪ Optimized for high frequency inverter
Type Welding machines
▪ High frequency SMPS
▪ UPS, Robotics
Package : V1
VCES = 1200V
Ic = 75A
VCE(ON) typ. = 2.6V
@ Ic = 75A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 80
TC = 80
AC 1 minute
Ratings
1200
± 20
75
150
75
150
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 500µA
VCE(ON)
Collector-to-Emitter Saturation Voltage
-
2.6 2.8
V IC = 75A, VGE = 15V
VGE(th)
Gate Threshold Voltage
- 5.0 6.0
VCE = VGE, IC = 500µA
ICES Zero Gate Voltage Collector Current
- - 500 µA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current
-
-
± 100
nA VCE = 0V, VGE = ± 20V
VFM Diode Forward Voltage Drop
- 2.1 2.4 V IC = 75A
1 page  
Preliminary
SIM75D12SV1
Fig 9. Typ. Capacitance vs. VCE
VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE
ICE = 60A; L = 600µH
Fig 11. Typ. Switching Time vs. IC
TJ = 125 ; L = 200µH; VCE = 600V
RG = 4.7Ω; VGE = 15V
Fig 12. Typ. Switching Time vs. RG
TJ = 125 ; L = 200µH; VCE = 600V
ICE = 75A; VGE = 15V
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIM75D12SV1.PDF ] | |
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