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Numéro de référence | KGH25N120NDA | ||
Description | NPT IGBTs | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
KGH25N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for
application such as IH (induction heating), UPS, General inverter and other
soft switching applications.
FEATURES
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
A
N
O
D
E
d
PP
123
QB
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
1200
20
V
V
Collector Current
Pulsed Collector Current
@TC=25
@TC=100
Diode Continuous Forward Current @TC=100
Diode Maximum Forward Current
40 A
IC
25 A
ICM* 75 A
IF 25 A
IFM 110 A
Maximum Power Dissipation
Maximum Junction Temperature
@TC=25
@TC=100
300 W
PD
120 W
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
TO-3P(N)-E
C
G
E
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
SYMBOL
R JC
R JC
MAX.
0.4
1.2
UNIT
/W
/W
2009. 2. 19
Revision No : 2
1/6
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Pages | Pages 6 | ||
Télécharger | [ KGH25N120NDA ] |
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