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PDF GT10Q101 Data sheet ( Hoja de datos )
| Número de pieza | GT10Q101 | |
| Descripción | High Power Switching Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Preliminary
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm
• The 3rd Generation
• Enhancement-Mode
• High Speed: tf = 0.32 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
1200
±20
10
20
140
150
−55~150
Unit
V
V
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1 2002-01-23
1 page  
3000
C – VCE
1000
300
Cies
100
30
Common emitter
10 VGE = 0
f = 1 MHz
Tc = 25°C
3
0.1 0.3
1
3
Coes
Cres
10 30 100
1000
Collector-emitter voltage VCE (V)
Safe operating area
100
50
30 IC max (pulsed)*
IC max (continuous)
10
100 µs*
50 µs*
5 DC
3 operation
*: Single
1 nonrepetitive
pulse Tc = 25°C
0.5 Curves must be
0.3 dilated linearly with
increase in
temperature.
0.1
1 3 10
30
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT10Q101
VCE, VGE – QG
1000
Common emitter
RL = 60 Ω
800 Tc = 25°C
600 600 400
400 VCE = 200 V
200
0
0 20 40 60 80
Gate charge QG (nC)
20
16
12
8
4
0
100
Reverse bias SOA
50
30
10
5
3
1
0.5
0.3 Tj <= 125°C
VGE = ±15 V
RG = 75 Ω
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
102
Tc = 25°C
101
Rth (t) – tw
100
10−1
10−2
10−3
10−410−5
10−4
10−3
10−2
10−1 100
101
102
Pulse width tw (s)
5
2002-01-23
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT10Q101.PDF ] | |
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