DataSheetWiki


FQA6N90C_F109 fiches techniques PDF

Fairchild Semiconductor - 900V N-Channel MOSFET

Numéro de référence FQA6N90C_F109
Description 900V N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FQA6N90C_F109 fiche technique
FQA6N90C_F109
900V N-Channel MOSFET
Features
• 6A, 900V, RDS(on) = 2.3@VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
September 2007
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3PN
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA6N90C_F109
900
6.0
3.87
24.0
± 30
650
6.0
19.8
4.0
198
1.59
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.63
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQA6N90C_F109 Rev. A
1
www.fairchildsemi.com

PagesPages 8
Télécharger [ FQA6N90C_F109 ]


Fiche technique recommandé

No Description détaillée Fabricant
FQA6N90C_F109 900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche