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Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3310

Numéro de référence K3310
Description MOSFET ( Transistor ) - 2SK3310
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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K3310 fiche technique
2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.48 (typ.)
High forward transfer admittance: |Yfs| = 4.3 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
450
450
±30
10
40
40
222
10
4
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2004-07-06

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