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PDF FDC365P Data sheet ( Hoja de datos )
| Número de pieza | FDC365P | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A, 55mΩ
Features
Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
RoHS Compliant
November 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Applications
Inverter
Power Supplies
S
D
D
Pin 1
D
D
SuperSOTTM -6
G
D1
D2
G3
6D
5D
4S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-35
±20
-4.3
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.365P
Device
FDC365P
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
1
www.fairchildsemi.com
1 page  
Dimensional Outline and Pad Layout
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDC365P.PDF ] | |
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