(PDF) K3142 Datasheet - MOSFET ( Transistor )

Número de pieza	K3142
Descripción	MOSFET ( Transistor ) - 2SK3142
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM ADE-208-681A (Z) 2nd. Edition February 1999 D G 123 1. Gate 2. Drain 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 0.2 I D = 50 A 0.1 20 A 10 A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) 2SK3142 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 VGS = 4 V 3 10 V 1 0.3 0.1 1 3 10 30 100 300 1000 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 I D = 50 A 8 4V 10, 20 A 4 VGS = 10 V 10, 20, 50 A 0 –50 0 50 100 150 200 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 500 V DS = 10 V 200 Pulse Test 100 50 Tc = –25 °C 20 10 5 2 1 0.5 0.1 25 °C 75 °C 0.3 1 3 10 30 Drain Current I D (A) 100 5 5 Page

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PDF K3142 Data sheet ( Hoja de datos )