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PDF K3113 Data sheet ( Hoja de datos )
| Número de pieza | K3113 | |
| Descripción | MOSFET ( Transistor ) - 2SK3113 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)
FEATURES
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating ±30 V
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note2
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
600
±30
±2.0
±8.0
20
1.0
150
–55 to +150
2.0
2.7
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
1998, 2001
1 page  
2SK3113
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
8 ID = 2 A
7
6 1A
5
4
3
2
1
0
−50
VGS = 10 V
0 50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0 V
1000
100
10
0.1
1.0 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
VGS = 10 V
0.1
0V
Pulsed
0 0.5 1.0 1.5
VF(S-D) - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
10 tf
td(on)
tr
1
0.1
0.1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1 10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800 16
ID = 2.0 A
14
600 VDD = 450 V
300 V
150 V
400
12
VGS
10
8
6
200 4
2
VDS
00
0 4 8 12 16
QG - Gate Charge - nC
Data Sheet D13336EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3113.PDF ] | |
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