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AP11SL60I-A-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP11SL60I-A-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP11SL60I-A-HF fiche technique
Advanced Power
Electronics Corp.
AP11SL60I-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
Description
AP11SL60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID3,4
700V
0.38Ω
10A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
650 V
VGS
ID@TC=25
ID@TC=100
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3,4
Drain Current, VGS @ 10V3,4
Pulsed Drain Current1
+20 V
10 A
6.5 A
24 A
PD@TC=25
Total Power Dissipation
31.2 W
PD@TA=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy5
1.92 W
5 mJ
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Units
/W
/W
1
201410143

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