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Numéro de référence | AP60SL600H | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP60SL600H
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP60SL600 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
VDS @ Tj,max.
RDS(ON)
ID3
650V
0.6Ω
7A
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
7A
4.4 A
18 A
PD@TC=25℃
Total Power Dissipation
56.8 W
PD@TA=25℃
EAS
Total Power Dissipation
Single Pulse Avalanche Energy5
2W
5 mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
2.2
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
20141105V0.1
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Pages | Pages 5 | ||
Télécharger | [ AP60SL600H ] |
No | Description détaillée | Fabricant |
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AP60SL600AJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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