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Número de pieza | AOL1202 | |
Descripción | 30V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOL1202 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOL1202
30V N-Channel MOSFET
General Description
The AOL1202 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
54A
< 4.2mΩ
< 6mΩ
UltraSO-8TM
Top View
Bottom View
D
D
G
S
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
54
42
200
16
13
38
72
58
29
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
2.1
Max
25
60
2.6
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : December 2009
www.aosmd.com
Page 1 of 6
1 page AOL1202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
70
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
60
50
40
30
20
10
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
60
50
40
30
20
10
0
0
10
1
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
0.0001
0.01
1
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: December 2009
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOL1202.PDF ] |
Número de pieza | Descripción | Fabricantes |
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