DataSheetWiki


J348 fiches techniques PDF

Sanyo - P-Channl Silicon MOSFET

Numéro de référence J348
Description P-Channl Silicon MOSFET
Fabricant Sanyo 
Logo Sanyo 





1 Page

No Preview Available !





J348 fiche technique
Ordering number:ENN6421
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
P-Channel Silicon MOSFET
2SJ348
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SJ348]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25˚C
2.55
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–15A
ID=–15A, VGS=–10V
ID=–15A, VGS=–4V
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
Ratings
–60
±20
–30
–120
1.75
70
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
–60 V
±20 V
–100 µA
±10 µA
–1.0
–2.0 V
15 25
S
30 40 m
40 55 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2174 No.6421–1/4

PagesPages 4
Télécharger [ J348 ]


Fiche technique recommandé

No Description détaillée Fabricant
J340 P-Channel MOSFET ( Transistor ) - 2SJ340 Sanyo Semiconductor Corporation
Sanyo Semiconductor Corporation
J344 P-Channel MOSFET ( Transistor ) - 2SJ344 Toshiba
Toshiba
J348 P-Channl Silicon MOSFET Sanyo
Sanyo

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche