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PDF ICE10N65 Data sheet ( Hoja de datos )
| Número de pieza | ICE10N65 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
9.5A
650V
0.35
41nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings at Tj=25oC, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Symbol
Conditions
ID
ID, pulse
Tc=25oC
Tc=100oC
Tc=25oC
E AS
ID=8.3A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=9.5A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
Value
9.5
5.9
28.5
340
5
50
±20
±30
95
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-10N65-000-7
06/26/2014
1
1 page  
ICE10N65
10000
1000
100
Capacitance
Ciss
Coss
Source-Drain Diode Forward Voltage
100
10
TJ = 125˚C
TJ = 25˚C
10
1
0
Crss
50 100 150
VDS - Drain-to-Source Voltage (V)
200
1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
RDS(on) Limited
VGS=10V
10 TA = 25oC,
Single Pulse
1
0.1
0.01
0.1
RDS(on) Limit
Package Limit
Thermal Limit
1 10 100
VDS - Drain-to-Source Voltage (V)
10µs
100µs
1ms
10ms
DC
1000
Transient Thermal Response, Junction-to-Ambient
1.00
0.50
0.20
0.10
0.10
0.05
0.02
1.2
0.01
Single Pulse
SP-10N65-000-7
06/26/2014
0.00
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t - Time (seconds)
1.0E-01
1.0E+00
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE10N65.PDF ] | |
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