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Número de pieza | VN0104N2 | |
Descripción | N-Channel Enhancement-Mode Vertical DMOS Power FET | |
Fabricantes | New Jersey Semiconductor | |
Logotipo | ||
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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: (973) 376-2922
VN0104N2 - VN0109ND
(212)227-6005
FAX: (973) 376-8960
N-Channel Enhancement-Mode
Vertical DMOS Power FET's
Product Summary
BVDSS /
BVDGS
40V
60V
90V
RDS(ON) ID(ON)
(max)
(min) TO-39 Hro-92
Order Number/Package
TO - 5 2 TO-220 Quad P-DIP Quad C-DIP Dice
sn 2.0A VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7 VN0104ND
3S2 2.0A VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106ND
sn
2.0A VN0109N2 VN0109N3 VN0109N9 VN0109N5
-
- VN0109ND
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Dram-to-Source
Breakdown Voltage
VN0109
VN0106
VN0104
Min Typ Max Unit
Conditions
90
60 V ID = imA, VGS = o
40
VGS(th)
AVGS(th)
IGSS
IDSS
Gate Threshold Voltage
0.8 2.4
Change in VGS(th) with Temperature
-3.8 -5.5
Gate Body Leakage
0.1 100
Zero Gate Voltage Drain Current
1
100
ID(ON)
ON-State Drain Current
0.75 1.0
RDS(ON) Static Drain-to-Source
|2__
3
2.50
4.50
ON-State Resistance
L 2'3
2
ARDS(ON) Change in RDS(ON) with Temperature
' 0.70
GFS
Ciss
Coss
CRSS
td(ON)
Forward Transcondyctance
300 400
Input Capacitance
45
Common Source Output Capacitance
20
Reverse TransferCapacitance
2
Turn ON Delay Time
3
tr
td(OFF)
Rise Time
Turn-OFF Delay Time
5
6
tf Fall Time
VSD H Diode Forward Voltage Drop
trr Reverse Recovery Time
5
1.2
400
5
3
1
60
25
5
5
8
g
8
1.8
V
mV/°C
nA
uA
A
ft
%/°C
mU
VGS = VDS, ID = 1mA
ID- imA, VGS=VDS
VGS = ±20V, VDS = 0
VGS = 0, VDS = Max Rating
VGS = 0, VDS = 0.8 Max Rating
T A - 125°C
VGS = 5v, VDS = 25V
VGS = iov, VDS= 25v
VGS -5V, I D= 250mA
VGS= iov, ID = IA
ID = IA, VGS= iov
VDS = 25V, ID = 0.5A
PF VGS = 0, VDS = 25V
f = 1MHz
ns VDD = 25V, ID= 1A,
RS = RL = 50f2
V ISD = 2.5A, VGS = 0
ns ISD = 1A, VGS = O
TO-92 Plastic Package
3-Lead
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet VN0104N2.PDF ] |
Número de pieza | Descripción | Fabricantes |
VN0104N2 | N-Channel Enhancement-Mode Vertical DMOS Power FET | New Jersey Semiconductor |
VN0104N3 | N-Channel Enhancement-Mode Vertical DMOS Power FET | New Jersey Semiconductor |
VN0104N5 | N-Channel Enhancement-Mode Vertical DMOS Power FET | New Jersey Semiconductor |
VN0104N6 | N-Channel Enhancement-Mode Vertical DMOS Power FET | New Jersey Semiconductor |
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