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STP11N65M2 fiches techniques PDF

STMicroelectronics - N-channel Power MOSFET

Numéro de référence STP11N65M2
Description N-channel Power MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STP11N65M2 fiche technique
STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
' 7$%
Features
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
VDS
RDS(on) max ID
650 V
0.67 Ω
7A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
* 
6 
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
Table 1. Device summary
Marking
Package
11N65M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
May 2014
DocID026376 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/21
www.st.com

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