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PDF STP11N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STP11N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
TAB
2
3
1
D2PAK
23
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Marking
11N65M5
'
3
!-V
Package
D2PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 022864 Rev 2
1/25
www.st.com
25
1 page  
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21 and
Figure 24)
Min. Typ. Max. Unit
23 ns
10 ns
--
13.5 ns
13 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 9 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
9A
36 A
1.5 V
232 ns
2 µC
17.5 A
328 ns
2.8 µC
17 A
Doc ID 022864 Rev 2
5/25
5 Page 
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0°
mm
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
Doc ID 022864 Rev 2
11/25
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet STP11N65M5.PDF ] | |
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