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GN8062 fiches techniques PDF

Panasonic Semiconductor - GaAs IC

Numéro de référence GN8062
Description GaAs IC
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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GN8062 fiche technique
GaAs MMICs
GN8062
GN8062
GaAs IC
For semiconductor laser drive
Unit : mm
s Features
q High-speed switching
q High output
q Pulse current and DC bias current can be controlled.
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Rating
Unit
Power supply voltage
Pin voltage
Power current
Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature
VDD
VSS
VIN
VIp* 5
VOUT* 1
IDD* 4
ISS
IOUT
PD* 2
Tch
Tstg
Topr* 3
6
–6
– 0.5 to VDD–1.5
1.5 to VDD
VDD
50
40
145
700
150
– 55 to +150
–10 to +75
V
V
V
V
V
mA
mA
mA
mW
˚C
˚C
˚C
* 1 Do not apply the voltage higher than the set VDD.
* 2 Guaranteed value of the unit at Ta= 25˚C.
* 3 Range in which the IC circuit function operates and not the guaranteed range of
electric characteristics.
* 4 IDD is a current when the pulse output current is zero.
* 5 Voltage when the constant current source has been connected.
18
27
36
45
6.4±0.2
0.7min.
4.5max. 4.0max.
7.62±0.2
0 to 15˚
1 : GND
2 : NC
0.35max.
3 : NC
4 : OUT
5 : VIP
6 : VDD
7 : VIN
8 : VSS
8-Lead Plastic DIL Package
s Electrical Characteristics (Ta = 25˚C)
Parameter
Pulse output current
Supply current
Input voltage
Rise time
Fall time
Symbol
Ipmax.
Ipmin.
IDD* 1
ISS
VIH
VIL
tr* 2
tf* 2
Test circuit
1
1
2
2
3
3
Condition
VDD= 5V, VSS= –5V, VIN= 2V, Ip=120mA, RL=10
VDD= 5V, VSS= –5V,VIN= 0.4V, Ip=120mA, RL=10
VDD= 5V, VSS= – 5V, VIN= 0.4V
Ip= 0, RL=10
VDD= 5V, VSS= – 5V, Ip=100mA
RL=10
Min Typ Max Unit
100 120
mA
1 5 mA
35 50 mA
25 40 mA
2.5 V
0.4 V
7 ns
5 ns

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