DataSheetWiki


GR2B fiches techniques PDF

EIC discrete Semiconductors - GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

Numéro de référence GR2B
Description GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





1 Page

No Preview Available !





GR2B fiche technique
GR2A - GR2M
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
SMB (DO-214AA)
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 2.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL GR2A GR2B GR2D GR2G GR2J GR2K GR2M UNIT
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
2.0 A
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
75
1.3
10
500
150 250
15
- 65 to + 150
- 65 to + 150
500
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002

PagesPages 2
Télécharger [ GR2B ]


Fiche technique recommandé

No Description détaillée Fabricant
GR20-G HIGH VOLTAGE FAST RECOVERY RECTIFIERS EIC
EIC
GR281 2048 x 8-Bit Non-Volatile CMOS Static RAM Greenwich
Greenwich
GR281 Non Volatile Memory Greenwich Instruments
Greenwich Instruments
GR2A GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS EIC discrete Semiconductors
EIC discrete Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche