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General Semiconductor - SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER

Numéro de référence GF1K
Description SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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GF1K fiche technique
GF1A THRU GF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
DO-214BA
0.060 (1.52)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.0105 (0.27)
0.0065 (0.17)
0.118 (3.00)
0.106 (2.69)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.152 TYP.
0.006
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
®
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief
Easy pick and place
High temperature soldering guaranteed: 450°C/5 seconds
at terminals
Complete device submersible temperature of 265°C for
10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device marking code
SYMBOLS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
CJ
RΘJA
RΘJL
TJ, TSTG
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
GF1A
GA
50
35
50
GF1B
GB
100
70
100
GF1D
GD
200
140
200
GF1G
GG
400
280
400
1.0
GF1J
GJ
600
420
600
GF1K
GK
800
560
800
GF1M
GM
1000
700
1000
UNITS
Volts
Volts
Volts
Amp
30.0
1.10
5.0
50.0
2.0
15.0
80.0
26.0
-65 to +175
Amps
1.20 Volts
µA
µs
pF
°C/W
°C
4/98

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