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General Semiconductor - GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Numéro de référence GI1001
Description GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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GI1001 fiche technique
GI1001 THRU GI1004
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere
DO-204AP
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.150 (3.8)
0.100 (2.5)
DIA.
0.240 (6.1)
MAX.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Brazed lead assembly is covered by Patent No. 3,930,30
FEATURES
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Capable of meeting environmental standards of
MIL-S-19500
Hermetically sealed package
Low leakage current
High surge capability
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TL=75°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TL=75°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
(NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
GI1001
50
35
50
GI1002
100
70
100
GI1003
150
105
150
1.0
GI1004
200
140
200
UNITS
Volts
Volts
Volts
Amp
IFSM
VF
IR
trr
CJ
RΘJA
RΘJL
TJ, TSTG
30.0
0.975
2.0
50.0
25.0
45.0
65.0
20.0
-65 to +175
Amps
Volts
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length and mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm)
(4) Thermal resistance from junction to lead at 0.375" (9.5mm) lead length with both leads attached to heatsinks
4/98

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