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PDF AON7280 Data sheet ( Hoja de datos )
| Número de pieza | AON7280 | |
| Descripción | 80V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AON7280 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AON7280
80V N-Channel MOSFET
General Description
Product Summary
The AON7280 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
80V
50A
< 8.5mΩ
< 12mΩ
DFN 3.3x3.3 EP
Top View
Bottom View
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Top View
18
27
36
45
G
Maximum
80
±20
50
39
160
20
15
35
61
83
33
6.3
4
-55 to 150
Typ Max
16 20
45 55
1 1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Dec. 2012
www.aosmd.com
Page 1 of 6
1 page  
AON7280
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
100
TA=150°C
10
TA=100°C
TA=125°C
80
60
40
20
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
60
50
40
30
20
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Dec. 2012
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON7280.PDF ] | |
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