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PDF FDN359BN Data sheet ( Hoja de datos )
| Número de pieza | FDN359BN | |
| Descripción | N-Channel Logic Level PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 2.7 A, 30 V.
RDS(ON)= 0.046 Ω @ VGS = 10 V
RDS(ON)= 0.060 Ω @ VGS = 4.5 V
• Very fast switching speed.
• Low gate charge (5nC typical)
• High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
DD
SuperSOTTM-3
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
(Note 1a)
– Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
359B
FDN359BN
7’’
GS
Ratings
30
±20
2.7
15
0.5
0.46
−55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
1 page  
Typical Characteristics
10
ID = 2.7A
8
6
4
VDS = 10V
20V
15V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
VGS = 0 V
600
Ciss
400
200
Coss
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
30
SINGLE PULSE
25 RθJA = 270°C/W
TA = 25°C
20
15
10
5
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE
RθJA(t) = r(t) * RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN359BN Rev A(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDN359BN.PDF ] | |
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