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Matsuki - N-Channel 250-V (D-S) MOSFET

Numéro de référence ME04N25
Description N-Channel 250-V (D-S) MOSFET
Fabricant Matsuki 
Logo Matsuki 





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ME04N25 fiche technique
N-Channel 250-V (D-S) MOSFET
ME04N25/ME04N25-G
GENERAL DESCRIPTION
The ME04N25 is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
FEATURES
RDS(ON)1.8Ω@VGS=10V
RDS(ON)2.0Ω@VGS=5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
e Ordering Information: ME04N25 (Pb-free)
ME04N25-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25
TC=70
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25
TC=70
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Case *
RθJC
* The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
250
±20
3.3
2.6
13
31
20
-55 to 150
4.0
Unit
V
V
A
A
W
℃/W
Feb,2012,Ver1.1
01

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