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Numéro de référence | SVD9N65F | ||
Description | 650V N-CHANNEL MOSFET | ||
Fabricant | Silan Microelectronics | ||
Logo | |||
9A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD9N65T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
SVD9N65T/F
ORDERING SPECIFICATIONS
Part No.
SVD9N65T
SVD9N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVD9N65T
SVD9N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3 2010.10.11
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Pages | Pages 8 | ||
Télécharger | [ SVD9N65F ] |
No | Description détaillée | Fabricant |
SVD9N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
SVD9N65T | 650V N-CHANNEL MOSFET | Silan Microelectronics |
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