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PDF MJE13003A Data sheet ( Hoja de datos )
| Número de pieza | MJE13003A | |
| Descripción | TRIPLE DIFFUSED NPN TRANSISTOR | |
| Fabricantes | First Silicon | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25˚C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
VEBO
IC
ICP
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
1.5
3
0.75
1.1
150
-55~150
UNIT
V
V
V
A
A
W
˚C
˚C
MJE13003A
TRIPLE DIFFUSED NPN TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4 70 MAX
B 4 80 MAX
C 3 70 MAX
D 0 45
E 1 00
F 1 27
G 0 85
H 0 45
J 14 00 +_0 50
K 0 55 MAX
L 2 30
M 0 45 MAX
N 1 00
1 EMITTER
2 COLLECTOR
3 BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition Frequency
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
VEB=9V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCE=10V, IC=0.1A
Turn-On Time
Storage Time
Fall Time
Note : hFE Classification
ton
tstg
tf
R:9~15, O:13~21, Y: 20~38
300μ S
IB1
IB1
INPUT
IB2 IB2
IB1=IB2 =0 2A
DUTY CYCLE =< 1%
OUTPUT
125Ω
VCC =125V
MIN.
-
9
5
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
10
38
-
0.5
1
3
1
1.2
-
UNIT
μA
V
V
MHz
- 1.0 μS
- - 3 μS
- - 0.7 μS
2008. 2. 22
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJE13003A.PDF ] | |
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