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Silan Microelectronics - 500V N-CHANNEL MOSFET

Numéro de référence SVD830T
Description 500V N-CHANNEL MOSFET
Fabricant Silan Microelectronics 
Logo Silan Microelectronics 





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SVD830T fiche technique
SVD830T/F/D_Datasheet
4.5A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD830T/F/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD830T
SVD830F
SVD830D
SVD830DTR
Package
TO-220-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVD830T
SVD830F
SVD830D
SVD830D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C, TO-220)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVD830T
87.5
0.7
Rating
SVD830F
500
±30
4.5
18
42
0.34
256
-55+150
-55+150
SVD830D
76
0.61
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.21
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