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Silan Microelectronics - 400V N-CHANNEL MOSFET

Numéro de référence SVD730D
Description 400V N-CHANNEL MOSFET
Fabricant Silan Microelectronics 
Logo Silan Microelectronics 





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SVD730D fiche technique
SVD730D/F/T_Datasheet
5.5A, 400V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD730D/F/T is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
5.5A,400V,RDS(on)typ=0.9Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVD730T
SVD730F
SVD730D
SVD730DTR
Package
TO-220-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVD730T
SVD730F
SVD730D
SVD730D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(TC=25°C, TO-220)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
EAS
TJ
Tstg
SVD730D
77
0.62
Ratings
SVD730F
400
±30
5.5
33
0.26
313
-55+150
-55+150
SVD730T
100
0.8
Unit
V
V
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.12.10
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