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Numéro de référence | S-LMDL6050T3G | ||
Description | Switching Diode | ||
Fabricant | LRC | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS
requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMDL6050T1G
S-LMDL6050T1G
1
2
SOD-323
ORDERING INFORMATION
Device
LMDL6050T1G
S-LMDL6050T1G
Marking
5A
LMDL6050T3G
S-LMDL6050T3G
5A
Shipping
3000/Tape&Reel
10000/Tape&Reel
1
CATHODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
VR
IF
I FM(surge)
Symbol
PD
R θJA
T J , T stg
Value
70
200
500
Max
200
1.57
635
150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol Min
OFFCHARACTERISTICS
Reverse Breakdown Voltage (I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 50 Vdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1)
Capacitance (V R = 0 V)
V (BR)
IR
VF
t rr
C
70
—
0.55
0.85
—
—
Max
—
0.1
0.7
1.1
4.0
2.5
Unit
Vdc
µAdc
Vdc
ns
pF
2
ANODE
Rev.O 1/3
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Pages | Pages 3 | ||
Télécharger | [ S-LMDL6050T3G ] |
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