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PDF VS-HFA220FA120 Data sheet ( Hoja de datos )

Número de pieza VS-HFA220FA120
Descripción Ultrafast Soft Recovery Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo



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VS-HFA220FA120
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 220 A
SOT-227
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(AV) per module at TC
Package
1200 V
2.68 V
58 ns
220 A at 38 °C
SOT-227
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA220FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current (1)
Single pulse forward current
VR
IF
IFSM
Maximum power dissipation per leg
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 68 °C
TJ = 25 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
110
700
500
400
2500
- 55 to 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR IR = 100 μA
1200
-
-
Forward voltage
IF = 100 A
IF = 200 A
VFM
IF = 100 A, TJ = 150 °C
- 2.68 3.60
- 3.41 4.70
- 2.62 2.89
V
IF = 200 A, TJ = 150 °C
- 3.59 3.89
VR = VR rated
- 10 75
μA
Reverse leakage current
IRM TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
-2-
mA
- 6 15
Note
(1) Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals.
Revision: 22-Jul-13
1 Document Number: 93636
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-HFA220FA120 pdf
www.vishay.com
ORDERING INFORMATION TABLE
VS-HFA220FA120
Vishay Semiconductors
Device code VS- HF A 220 F A 120
1 2 3 4567
1 - Vishay Semiconductors product
2 - HEXFRED® family
3 - Process designator (A = Electron irradiated)
4 - Average current (220 = 220 A)
5 - Circuit configuration (2 separate diodes, parallel pin-out)
6 - Package indicator (SOT-227 standard insulated base)
7 - Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
2 separate diodes,
parallel pin-out
F
4
1
CIRCUIT DRAWING
Lead Assignment
4
3
2
1
3
2
Revision: 22-Jul-13
5 Document Number: 93636
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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