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PDF VS-VSKT570-18PbF Data sheet ( Hoja de datos )
| Número de pieza | VS-VSKT570-18PbF | |
| Descripción | Thyristor/Thyristor | |
| Fabricantes | Vishay | |
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VS-VSKT570-18PbF
Vishay Semiconductors
Thyristor/Thyristor, 570 A
(SUPER MAGN-A-PAK Power Modules)
SUPER MAGN-A-PAK
PRODUCT SUMMARY
IT(AV)
570 A
Type
Modules - Thyristor, Standard
Package
SMAP
Circuit
Two SCRs Doubler Circuit
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 VRMS isolating voltage with non-toxic
substrate
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptible power supplies
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
IT(RMS)
ITSM
TC = 74 °C
TC = 74 °C
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TStg
TJ
Range
Range
Range
VALUES
570
895
17 800
18 700
1591
1452
15 910
1800
-40 to +135
-40 to +135
UNITS
A
kA2s
kA2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-VSKT570-18PbF
18
1800
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1900
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
120
Revision: 08-Jul-14
1 Document Number: 93281
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-VSKT570-18PbF
Vishay Semiconductors
900
800
700 Ø Ø
600 Conduction angle
500
180°
120°
90°
60°
30°
400
300
200
100
0
0
VSKT570-18PbF
per module
TJ = 135 °C
100 200 300 400 500 600 700 800 900
Total RMS Output Current (A)
900
800
R
700
500
500
400
00.3.02K.10K/2.W0/W9K/KWth/SWA = 0.07 K/W
300 00.5.4KK/W/W
200 0.6 K/W
100
0
0 20 40 60 80 100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
10 000
TJ = 25 °C
TJ = 135 °C
0.1
VSKT570-18PbF
per junction
1000
0.01
VSKT570-18PbF
per junction
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous On-State Voltage (V)
Fig. 8 - On-State Voltage Drop Characteristics
Steady state value
RthJC = 0.065 K/W
(DC operation)
0.001
0.001 0.01
0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω;
tr ≤ 1 µs
10
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
VSK.570-18PbF
Frequency limited by PG(AV)
0.1 1 10
Instantaneous Gate Current (A)
100
Fig. 10 - Gate Characteristics
1000
Revision: 08-Jul-14
5 Document Number: 93281
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-VSKT570-18PbF.PDF ] | |
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