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PDF VS-GB200TH120U Data sheet ( Hoja de datos )
| Número de pieza | VS-GB200TH120U | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GB200TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 200 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 200 A, 25 °C
Package
Circuit
1200 V
200 A
3.10 V
Double INT-A-PAK
Half bridge
FEATURES
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low switching losses
• Rugged with ultrafast performance
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
VCES
VGES
IC
ICM (1)
IF
IFM
TC = 25 °C
TC = 80 °C
tp = 1 ms
TC = 80 °C
tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
1200
± 20
330
200
400
200
400
1316
10
2500
UNITS
V
A
W
μs
V
Revision: 03-Jul-14
1 Document Number: 94754
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB200TH120U
Vishay Semiconductors
16
14
12
10
Erec
8
6
4 VCC = 600 V
IC = 200 A
2 VGE = - 15 V
TJ = 125 °C
0
0 10 20
30
40 50
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
1
Diode
0.1
0.01
0.001
0.001
CIRCUIT CONFIGURATION
0.01 0.1
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
12
6
7
3
5
4
10
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 03-Jul-14
5 Document Number: 94754
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet VS-GB200TH120U.PDF ] | |
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