DataSheetWiki


VS-GA200SA60UP fiches techniques PDF

Vishay - Insulated Gate Bipolar Transistor

Numéro de référence VS-GA200SA60UP
Description Insulated Gate Bipolar Transistor
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





VS-GA200SA60UP fiche technique
www.vishay.com
VS-GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
VCE(on) (typical)
VGE
IC
Package
Circuit
600 V
1.92 V
15 V
100 A
SOT-227
Single Switch no Diode
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
VGE
EARV
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 2.0 ,
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
6-32 or M3 screw
MAX.
600
200
100
400
400
± 20
160
2500
500
200
- 55 to + 150
1.3 (12)
UNITS
V
A
V
mJ
V
W
°C
Nm
(lbf in)
Revision: 13-Sep-13
1 Document Number: 94364
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 8
Télécharger [ VS-GA200SA60UP ]


Fiche technique recommandé

No Description détaillée Fabricant
VS-GA200SA60UP Insulated Gate Bipolar Transistor Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche