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Número de pieza | VS-40MT120UHAPbF | |
Descripción | IGBT MTP | |
Fabricantes | Vishay | |
Logotipo | ||
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VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 25 °C
Package
Circuit
1200 V
3.36 V
80 A
MTP
Half bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
Available
Available
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery and low VF
• Al2O3 DBC
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation (only IGBT)
PD
TEST CONDITIONS
TC = 25 °C
TC = 104 °C
TC = 105 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
80
40
160
160
21
160
± 20
2500
463
185
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94507
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
VS-40MT120UHAPbF, VS-40MT120UHTAPbF
Vishay Semiconductors
160
VGE = 18V
140 VGE = 15V
VGE = 12V
120 VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0 2 4 6 8 10
VCE (V)
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
120
-40°C
100 25°C
125°C
80
60
40
20
0
0.0 1.0 2.0 3.0
VF (V)
4.0 5.0
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
20
18
16
14
12
10
8
6
4
2
0
5
ICE= 80A
ICE= 40A
ICE= 20A
10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = - 40 °C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 80A
ICE = 40A
ICE = 20A
10 15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
20
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 80A
ICE= 40A
ICE= 20A
10 15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
20
350
300 TJ = 25°C
TJ = 125°C
250
200
150
100
50
0
0 5 10 15 20
VGE (V)
Fig. 12 - Typical Transfer Characteristics
VCE = 50 V; tp = 10 μs
Revision: 30-Oct-13
5 Document Number: 94507
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page DIMENSIONS in millimeters
MTP
Ø 5 Ø 1.1
Outline Dimensions
Vishay Semiconductors
R2.6 (x 3)
31.8
33
2
87 65 43
1
13
9 10 11 12
1.8
1.2 ± 0.1
7.8 ± 0.1
3 ± 0.1
7.2 ± 0.1
5.7 ± 0.1
5.4 ± 0.1
R5.8 (x 2)
8.7 ± 0.1
6 ± 0.1
8.5 ± 0.1
3 ± 0.1
39.5 ± 0.1
44.5
48.7
1.3
63.5 ± 0.25
Note
• Unused terminals are not assembled in the package
Document Number: 95175
Revision: 18-Mar-08
For technical questions, contact: [email protected]
www.vishay.com
1
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet VS-40MT120UHAPbF.PDF ] |
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