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VS-50MT060WHTAPbF fiches techniques PDF

Vishay - IGBT MTP

Numéro de référence VS-50MT060WHTAPbF
Description IGBT MTP
Fabricant Vishay 
Logo Vishay 





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VS-50MT060WHTAPbF fiche technique
www.vishay.com
VS-50MT060WHTAPbF
Vishay Semiconductors
"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 25 °C
Package
Circuit
600 V
2.3 V
114 A
MTP
Half bridge
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Speed 60 kHz to 100 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 109 °C
TC = 109 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
114
50
350
350
34
200
± 20
2500
658
263
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94468
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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