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PDF VS-GB150TS60NPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-GB150TS60NPbF | |
| Descripción | Ultrafast Speed IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
Package
Circuit
600 V
138 A
2.64 V
INT-A-PAK
Half bridge
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation
Isolation voltage
Operating junction temperature range
Storage temperature range
VCES
IC
ICM
ILM
IF
VGE
PD
VISOL
TJ
TStg
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
-40 to +150
-40 to +150
UNITS
V
A
V
W
V
°C
Revision: 29-Apr-14
1 Document Number: 94502
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB150TS60NPbF
Vishay Semiconductors
100
90 10 ohm
80
70
60 27 ohm
50
40
47 ohm
30
20
40 60 80 100 120 140 160
IF (A)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
100
80
60
17
16
15
14
13
12
11
10
9
8
7
6
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
TJ = 125 °C, L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V
10
Ic = 150A
Ic = 100A
Ic = 75A
40
20
0 10 20 30 40 50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 150 A
1
0 25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature;
L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V
90
80
70
60
50
200 400 600 800 1000 1200 1400
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V
8
7
6
5
4
3
2
1
0
0 40 80 120 160
IC (A)
Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current;
TJ = 125 °C, Rg1 = 10 , Rg2 = 0 , VCC = 360 V, VGE = 15 V
Revision: 29-Apr-14
5 Document Number: 94502
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-GB150TS60NPbF.PDF ] | |
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