DataSheetWiki


VS-GT50TP60N fiches techniques PDF

Vishay - Half Bridge IGBT Power Module

Numéro de référence VS-GT50TP60N
Description Half Bridge IGBT Power Module
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





VS-GT50TP60N fiche technique
www.vishay.com
VS-GT50TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 50 A
INT-A-PAK
FEATURES
• Low VCE(on) trench IGBT technology
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 50 A, 25 °C
600 V
50 A
1.65 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
VCES
VGES
IC
ICM (1)
IF
IFM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
TC = 80 °C
tp = 1 ms
Maximum power dissipation
PD TJ = 175 °C
Short circuit withstand time
tSC TC = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
600
± 20
85
50
100
50
100
208
5
4000
UNITS
V
A
W
μs
V
Revision: 17-Sep-12
1 Document Number: 94666
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 6
Télécharger [ VS-GT50TP60N ]


Fiche technique recommandé

No Description détaillée Fabricant
VS-GT50TP60N Half Bridge IGBT Power Module Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche