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PDF VS-GA200TH60S Data sheet ( Hoja de datos )
| Número de pieza | VS-GA200TH60S | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GA200TH60S
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 200 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 200 A, 25 °C
Package
Circuit
600 V
200 A
1.9 V
Double INT-A-PAK
Half bridge
FEATURES
• High short circuit capability
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Latch-up free
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM (1)
tp = 1 ms
Diode continuous forward current
IF TC = 80 °C
Diode maximum forward current
IFM tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TC = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
I2t-value, diode
I2t VR= 0 V, t = 10 ms, TJ = 125 °C
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
600
± 20
260
200
400
200
400
1042
10
2500
4900
UNITS
V
A
W
μs
V
A2s
Revision: 02-Jul-14
1 Document Number: 94762
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
100
10-1
10-2
VS-GA200TH60S
Vishay Semiconductors
Diode
IGBT
10-3
10-3
CIRCUIT CONFIGURATION
10-2
10-1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
12
6
7
3
5
4
100
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 02-Jul-14
5 Document Number: 94762
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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