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VS-20MT120UFP fiches techniques PDF

Vishay - IGBT MTP

Numéro de référence VS-20MT120UFP
Description IGBT MTP
Fabricant Vishay 
Logo Vishay 





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VS-20MT120UFP fiche technique
www.vishay.com
VS-20MT120UFP
Vishay Semiconductors
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A
MTP
PRODUCT SUMMARY
VCES
IC at TC = 25 °C
VCE(on)
Package
Circuit
1200 V
40 A
3.29 V
MTP
Full bridge
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Low diode VF
• Square RBSOA
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation (only IGBT)
PD
TEST CONDITIONS
TC = 25 °C
TC = 106 °C
TC = 106 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
1200
40
20
100
100
25
100
± 20
2500
240
96
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94505
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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